语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LWS6016A5 | Single | TO-263 | P | -60 | -80 | 156 | ±20 | -1.8 | 12 | 16 | 16 | 20 |  |
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| LWT1H13AS | Single | SOP8 | N | 100 | 11 | 3.4 | ±20 | 1.8 | 10.5 | 13 | 12 | 15 | |
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| LWT1H13AD5 | Single | PDFN5*6-8L | N | 100 | 50 | 75 | ±20 | 1.8 | 10.5 | 13 | 12 | 15 | |
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| LWS60110AS | Single | SOP8 | P | -60 | -5 | 3 | ±20 | -1.65 | 90 | 110 |  |
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| LWS60110A4 | Single | TO-252 | P | -60 | -12 | 60 | ±20 | -1.65 | 90 | 110 | |
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| LWS60110A23 | Single | SOT-223 | P | -60 | -4 | 3 | ±20 | -1.65 | 90 | 110 | |
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| LWS1H25H5 | Single | TO-263 | P | -100 | -65 | 250 | ±20 | -3 | 22 | 25 | |
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| LWS1H25H8 | Single | TO-220AB | P | -100 | -65 | 250 | ±20 | -3 | 22 | 25 | |
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| LWS1H25H4 | Single | TO-252 | P | -100 | -55 | 140 | ±20 | -3 | 22 | 25 | |
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| LWS1H25HD5 | Single | PDFN5*6-8L | P | -100 | -55 | 140 | ±20 | -3 | 22 | 25 | |
