语言选择SGT-MOS
乐瓦微SGT-MOS产品采用了具有电荷平衡功能的屏蔽栅深沟槽（Shield Gate Deep Trench）技术，全面提升了器件的开关特性和导通特性，同时降低了器件的特征导通电阻（ Rdson ）和栅极电荷（Qg），产品具有业内极低的FOM值（Rdson*Qg）。广泛应用于各种高频开关电源，BLDC控制，电池保护等市场。
N/P
VDSS (V)
Package
Configuration
| LW Product Name | Configuration | Package | N/P | VDSS (V) |
ID (A) |
Pd (W) |
VGS (V) |
Vth (Typ) |
Rdson(mΩ) @VGS10V Typ |
Rdson(mΩ) @VGS10V Max |
Rdson(mΩ) @VGS4.5V Typ |
Rdson(mΩ) @VGS4.5V Max |
Rdson(mΩ) @VGS2.5V Typ |
Rdson(mΩ) @VGS2.5V Max |
Rdson(mΩ) @VGS1.8V Typ |
Rdson(mΩ) @VGS1.8V Max |
产品应用 | 规格书 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| *LWS1H45AD5 | Single | PDFN5*6-8L | P | -100 | -28 | 83 | ±20 | -2 | 45 | 60 | 55 | 75 |  |
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| *LWS1H65A4 | Single | TO-252 | P | -100 | -27 | 82 | ±20 | -2 | 48 | 65 | 60 | 80 | |
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| *LWS1H90AS | Single | SOP-8 | P | -100 | -5 | 3.1 | ±20 | -2 | 72 | 90 | 87 | 105 |  |
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| *LWS1H90A4 | Single | TO-252 | P | -100 | -25 | 80 | ±20 | -2 | 72 | 90 | 87 | 105 | |
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| *LWS1H90AD3 | Single | PDFN3.3*3.3-8L | P | -100 | -17 | 52 | ±20 | -2 | 72 | 90 | 87 | 105 | |
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| *LWS1H90B4 | Single | TO-252 | P | -100 | -25 | 80 | ±20 | -1.8 | 73 | 89 | 90 | 110 | |
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| *LWS1H150AD3 | Single | PDFN3.3*3.3-8L | P | -100 | -12 | 40 | ±20 | -1.7 | 115 | 150 | 130 | 165 | |
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| *LWS1H150A23 | Single | SOT-223 | P | -100 | -4 | 5 | ±20 | -1.7 | 115 | 150 | 130 | 165 | |
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| *LWS1H150A4 | Single | TO-252 | P | -100 | -14.5 | 50 | ±20 | -1.7 | 115 | 150 | 130 | 165 | |
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| LWS1H150AS | Single | SOP-8 | P | -100 | -3 | 2.5 | ±20 | -1.7 | 115 | 150 | 130 | 165 | |
